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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG94 NPN 6 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
FEATURES * High power gain * Low noise figure * Low intermodulation distortion * Gold metallization ensures excellent reliability. DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope. It is primarily intended for use in communication and instrumentation systems.
1
Top view
BFG94
PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter
page
4
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre fT GUM VO PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation feedback capacitance transition frequency maximum unilateral power gain output voltage up to Ts = 140 C (note 1) IC = 0; VCE = 10 V; f = 1 MHz IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 45 mA; VCE = 10 V; dim = -60 dB; RL = 75 ; f = 800 MHz; Tamb = 25 C IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C open base CONDITIONS open emitter MIN. TYP. MAX. UNIT - - - - - 4 11.5 - - - - - - 6 13.5 500 15 12 60 700 0.8 - - - V V mA mW pF GHz dB mV
PL1 Note
output power at 1 dB gain compression
-
21.5
-
dBm
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 140 C (note 1) open emitter open base open collector CONDITIONS MIN. - - - - - -65 -
BFG94
MAX. 15 12 2 60 700 150 175
UNIT V V V mA mW C C
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 140 C (note 1) THERMAL RESISTANCE 50 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency CONDITIONS IE = 0; VCB = 10 V IC = 30 mA; VCE = 5 V IC = 45 mA; VCE = 10 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ie = 0; VEB = 0.5 V; f = 1 MHz IC = ic = 0; VCE = 10 V; f = 1 MHz IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 30 mA; VCE = 5 V; f = 1 GHz; Tamb = 25 C GUM F maximum unilateral power gain (note1) minimum noise figure IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C s = opt; IC = 45 mA; VCE = 10 V; f = 500 MHz s = opt; IC = 45 mA; VCE = 10 V; f = 1 GHz VO d2 PL1 ITO Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM S 21 ------------------------------------------------------------- dB. = 10 log 2 2 1 - S 11 1 - S 22
2
BFG94
MIN. TYP. MAX. - 45 - - - - 4 4 11.5 - - - - - 90 100 0.9 2.9 0.5 - 6 13.5 2.7 3 500 -51 21.5 34 100 - - 2 4.5 0.8 - - - - - - - - -
UNIT nA
pF pF pF GHz GHz dB dB dB mV dB dBm dBm
output voltage second order intermodulation distortion output power at 1 dB gain compression third order intercept point
note 2 note 3
IC = 45 mA; VCE = 10 V; RL = 50 ; - Tamb = 25 C; measured at f = 1 GHz note 4 -
2. dim = -60 dB (DIN 45004B, par 6.3: 3-tone); IC = 45 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = VO at dim = -60 dB; fp = 795.25 MHz; Vq = VO -6 dB; Vr = VO -6 dB; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz. 3. IC = 45 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vq = VO = 280 mV; fp = 250 MHz; fq = 560 MHz; measured at f(p+q) = 810 MHz. 4. IC = 45 mA; VCE = 10 V; RL = 50 ; Tamb = 25 C; fp = 1000 MHz; fq = 1001 MHz; measured at f(2p-q) and f(2q-p).
September 1995
4
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
+VBB L3 10 k L2 1 nF 1 nF L1 input 75 1 nF 247 DUT 2 pF 33 33
+VCC
output 75 DUT TEST FIXTURE
INPUT SLUG TUNER
BIAS TEE
input
OUTPUT SLUG TUNER
MBB780
BIAS TEE
output
MBB789
L1 = L3 = 5 H micro-choke. L2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm.
Fig.2
Test circuit for second and third order intermodulation distortion.
Fig.3
Measurement set-up for third order intercept point and 1 dB gain compression.
MBB790
handbook, halfpage
800
handbook, halfpage
120
MCD087
P tot (mW) 600
h FE
80
400
40 200
0 0 50 100 150 Ts (C) 200
0 0 10 20 IC (mA) 30
VCE = 10 V; Tj = 25 C
Fig.4 Power derating curve.
Fig.5
DC current gain as a function of collector current.
September 1995
5
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
handbook, halfpage
1
MBB791
C re (pF)
handbook, halfpage
8
MCD089
0.8
fT (GHz) 6
0.6 4 0.4 2 0.2
0 0 4 8 12 16 V CE (V)
0 0 10 20 30 I C (mA) VCE = 10 V; f = 1 GHz. 40
IC = ic = 0; f = 1 MHz.
Fig.6
Feedback capacitance as a function of collector-emitter voltage.
Fig.7
Transition frequency as a function of collector current.
MBB792
MBB793
handbook, halfpage
60
handbook, halfpage
40
G UM (dB)
G UM (dB) 30
40
20
20 10
0 40
0 400 f (MHz) 4000 10
102
103
f (MHz)
104
Ic = 45 mA; VCE = 10 V.
Ic = 20 mA; VCE = 8 V.
Fig.8
Maximum unilateral power gain as a function of frequency.
Fig.9
Maximum unilateral power gain as a function of frequency.
September 1995
6
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
MBB794
handbook, halfpage
20
handbook, halfpage
30
MBB795
G max (dB) 15
gain (dB) 20 G max
10 G UM 10 5
0 10
102
103
f (MHz)
104
0 0 10 20 30 50 40 I C (mA)
Ic = 20 mA; VCE = 8 V.
VCE = 8 V; f = 1 GHz. Gmax = maximum available stable gain. GUM = maximum unilateral power gain.
Fig.10 Maximum available stable gain as a function of frequency.
Fig.11 Gain as a function of collector current.
handbook, halfpage
20
MBB782
handbook, halfpage
20
MBB781
d2 (dB) 40
d3 (dB) 40
60
60
80
10
30
50
I C (mA)
70
80
10
30
50
I C (mA)
70
Ic = 45 mA; VCE = 10 V; f(p+q) = 810 MHz. See test circuit, Fig.2
Ic = 45 mA; VCE = 10 V; f(p+q-r) = 793.25 MHz. See test circuit, Fig.2
Fig.12 Second order intermodulation distortion as a function of collector current.
Fig.13 Third order intermodulation distortion as a function of collector current.
September 1995
7
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
handbook, halfpage
4
MCD094
F (dB) 3
f = 2 GHz
1 GHz 2 500 MHz
1
0 1 10 I C (mA)
10 2
VCE = 8 V.
Fig.14 Minimum noise figure as a function of collector current.
September 1995
8
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
handbook, full pagewidth
stability circle
1 2
0.5
e g io uns ta b le r n
0.2
= 1. B 80 d T OP
5 10 2
B
2.5 B 3d dB
+j 0 -j 0.2 0.5
F min
5
10
1
2d
10 5
0.2
B 4d B 5d
0.5 1 Ic = 15 mA; VCE = 10 V; f = 500 MHz.
2
MBB788
Fig.15 Noise circle.
handbook, full pagewidth
1 0.5 2
0.2
25 dB
5 10 2
dB
+j 0 -j 0.2
in Fm 0.5
=
2.
OP
T1
5
10
10
2. 5
dB 3
5 d dB B
3.
5
dB
0.2
4
5
0.5 1 Ic = 15 mA; VCE = 10 V; f =1 GHz.
2
MBB787
Fig.16 Noise circle.
September 1995
9
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
handbook, full pagewidth
50 25 100
3 GHz 10 250
+j 0 -j 10 25 50 100 250
10
40 MHz
250
25 50 IC = 45 mA; VCE = 10 V. ZO = 50 .
100
MBB784
Fig.17 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90 120 60
150 3 GHz
30
+
180 0.5 0.4 0.3 0.2 0.1 40 MHz 0
-
150
30
120 90 IC = 45 mA; VCE = 10 V.
60
MBB786
Fig.18 Common emitter forward transmission coefficient (S21).
September 1995
10
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
handbook, full pagewidth
90 120 60
150 40 MHz
30
+
180 50 40 30 20 10 3 GHz 0
-
150
30
120 90 IC = 45 mA; VCE = 10 V.
60
MBB785
Fig.19 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
50 25 100
10
250
+j 0 -j 10 25
3 GHz
50
100
250
40 MHz 10 250
25 50 IC = 45 mA; VCE = 10 V. ZO = 50 .
100
MBB783
Fig.20 Common emitter output reflection coefficient (S22).
September 1995
11
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BFG94
SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 96-11-11 97-02-28
September 1995
12
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFG94
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1995
13

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